Зарегистрироваться
Восстановить пароль
FAQ по входу

Выложенные файлы

  • Страницы:
  • 1
  • 2
  • 3
  • 4
  • 5
  • Всего: 205
Leuven, Belgium: Univ. of Leuven., 2012. — 131 p. — (PhD Thesis). In this study thermal Atomic Layer Deposited (ALD) Al 2 O 3 is characterized as surface passivation layer for p-type CZ silicon, and accordingly implemented into an industrial production of large-area crystalline silicon solar cells.
  • №1
  • 5,61 МБ
  • добавлен
  • изменен
Weinheim, Germany: Wiley-VCH, 2017. — xxv, 281 p. Combining the two topics for the first time, this book begins with an introduction to the recent challenges in energy conversion devices from a materials preparation perspective and how they can be overcome by using atomic layer deposition (ALD). By bridging these subjects it helps ALD specialists to understand the requirements...
  • №2
  • 8,17 МБ
  • добавлен
  • изменен
Учебное пособие. — Минск: РИПО, 2014. — 392 с. — ISBN 978-985-503-369-2. Представлено оборудование полупроводникового производства. Описаны принципы действия, устройство оборудования и его отдельных узлов. Приведены основные характеристики и требования к оборудованию. Рассмотрены вопросы наладки, регулировки и ремонта технологического оборудования. Для учащихся учреждений...
  • №3
  • 19,97 МБ
  • добавлен
  • изменен
Лабораторный практикум. — Минск: БГТУ, 2007. — 130 с. Предназначен для использования в качестве методического руководства по выполнению лабораторных работ по синтезу диэлектрических материалов и исследованию их свойств, важных для эффективного практического применения. Содержит описания следующих лабораторных работ: - Исследование высоты микронеровностей и толщины тонких...
  • №4
  • 2,23 МБ
  • добавлен
  • изменен
Amsterdam: Elsevier/Academic Press, 2003. — xiv, 444 p. — ISBN: 978-0-12-511221-5. Preface. Acknowledgements. List of Contributors. Introduction: Interlayer dielectrics in microelectronic devices M. Eizenberg . Dielectric properties. S.P. Murarka . Characterization of low dielectric constant materials. P.S. Ho, J. Liu, M. Morgen, M. Kiene, J.-H. Zhao and C. Hu . Compatibilities of...
  • №5
  • 4,97 МБ
  • добавлен
  • изменен
Springer-Verlag London, 2010. — XIV, 342 p. — (Engineering Materials and Processes). — ISBN 1848828934, 978184882893. The rapid advancement in chemical vapour deposition (CVD) technology has reached many fields of application, including thin film coating, microelectronics and communications. "Chemical Vapour Deposition: An Integrated Engineering Design for Advanced Materials"...
  • №6
  • 17,69 МБ
  • добавлен
  • изменен
Учебное пособие. — СПб: СПбГУИТМО, 2005. — 199 с.: ил. Пособие представляет собой конспект лекций по курсу «Оптические покрытия» и содержит сведения о методах расчёта спектральных характеристик многослойных систем, образованных прозрачными, непрозрачными и слабо поглощающими слоями. Большое внимание уделено оптическим характеристикам однослойных, двухслойных, трёхслойных и...
  • №7
  • 7,88 МБ
  • добавлен
  • изменен
Oxford: Woodhead Publishing, 2013. — xxvii, 835 p. — (Woodhead Publishing Series in Electronic and Optical Materials, vol. 49). — ISBN: 0857095943,9780857095947. Optical thin film coatings improve the performance of optical systems and most modern optical systems could not function without them. Examples of these coatings are mirrors, anti-reflection coatings, beamsplitters,...
  • №8
  • 34,99 МБ
  • добавлен
  • изменен
2-е изд., перераб. и доп. — Л.: Машиностроение, Ленингр. отделение, 1983. — 416 с.: ил. В монографии изложены вопросы конструирования и эксплуатации установок для криогенного производства инертных газов. Приведены характеристики промышленных адсорбентов, рассмотрены методы их регенерации. Описаны способы получения инертных газов из воздуха, природных и продувочных газов, а также...
  • №9
  • 3,72 МБ
  • добавлен
  • изменен
Trans Tech, 2010. — 172 p. — (Diffusion and Defect Data, Part A, Defect and Diffusion Forum, v. 302). — ISBN: 978-3-03813-381-0, 978-3-90845-185-3, 3038133817. This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L. Sharma’s monograph on ‘Diffusion in...
  • №10
  • 1,71 МБ
  • добавлен
  • изменен
Springer Science+Business Media, 2011. – viii, 246 p. — ISBN: 978-1-4419-0961-9, 978-1-4419-0962-6. Three-dimensional (3D) integrated circuit (IC) stacking enables packing more functionality, as well as integration of heterogeneous materials, devices, and signals, in the same space (volume). This results in consumer electronics (e.g., mobile, handheld devices) which can run more...
  • №11
  • 13,08 МБ
  • добавлен
  • изменен
Springer-Verlag Wien, 2004. – xxi, 562 p. – (Computational Microelectronics). – ISBN: 978-3-7091-7204-9, Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms,...
  • №12
  • 14,69 МБ
  • добавлен
  • изменен
2nd ed., revised. — Springer-Verlag Berlin Heidelberg, 2000. – xv, 269 p. – (Springer Series in Materials Science, vol. 24). — ISBN: 978-3-642-62965-5,978-3-642-57121-3. This book treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of...
  • №13
  • 6,95 МБ
  • добавлен
  • изменен
Springer-Verlag Berlin Heidelberg, 1967. — x, 134 p., 57 ill. — ISBN: 978-3-662-39204-1,978-3-662-40210-8. General Review of the Effect of Silicon-Dioxide Coatings on the Surface Properties of Silicon and the Importance of these Coatings in Semiconductor- Device Technology. Bulk properties of silicon Imperfections at the surface of a silicon crystal. Physical model of an...
  • №14
  • 3,69 МБ
  • добавлен
  • изменен
Springer, 2001. — xiii, 262 p. — (Springer Series in Materials Science 46). — ISBN 978-3-642-62583-1, 978-3-642-56711-7. This book presents fundamental experimental and theoretical developments relating to silicon oxidation for ultra-thin gate oxide formation. Starting with elementary processes taking place during wet chemical cleans prior to oxidation, the focus is then placed on...
  • №15
  • 9,07 МБ
  • добавлен
  • изменен
Boston: Academic Press, 1993. — viii, 430 p. — ISBN: 978-0-12-247690-7, 0-12-247690-5. Content: Rapid Thermal Processing — A Justification. Rapid Thermal Processing–Based Epitaxy. Rapid Thermal Growth and Processing of Dielectrics. Thin-Film Deposition. Extended Defects from Ion Implantation and Annealing. Junction Formation in Silicon by Rapid Thermal Annealing....
  • №16
  • 7,94 МБ
  • добавлен
  • изменен
N.-Y.: Springer Science+Business Media, 1997. — xxii, 358 p. — ISBN: 978-1-4899-1806-2, 978-1-4899-1804-8. Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide...
  • №17
  • 15,17 МБ
  • добавлен
  • изменен
Boca Raton, FL: CRC Press, 2009. — 753 p. — ISBN: 9781420043761, 1420043765. Uncover the defects that compromise performance and reliability as microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes...
  • №18
  • 18,86 МБ
  • добавлен
  • изменен
Springer, 1990. — xi, 438 p. — (NATO Advanced Science Institute Series, vol. 207). — ISBN: 978-1-4612-7857-3, 978-1-4613-0541-5. As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first...
  • №19
  • 22,80 МБ
  • добавлен
  • изменен
Springer-Science+Business Media, B.V., 1996. — xii, 565 p. — (NATO Advanced Science Institute Series, Series E: Applied Sciences, vol. 318). — ISBN: 978-90-481-4696-3, 978-94-015-8711-2. Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and materials science. Here, the...
  • №20
  • 17,27 МБ
  • добавлен
  • изменен
Elsevier Science, 2006. — 1157 p. — ISBN 008044699X, 9780080446998. The goal of producing devices that are smaller, faster, more functional, reproducible, reliable and economical has given thin film processing a unique role in technology. "Principles of Vapor Deposition of Thin Films" brings in to one place a diverse amount of scientific background that is considered essential...
  • №21
  • 9,62 МБ
  • добавлен
  • изменен
Boston: Academic Press, 1989. — xii, 477 p. — (Plasma - Materials Interactions). — ISBN: 978-0-12-469370-8, 0-12-469370-9. Plasma etching plays an essential role in microelectronic circuit manufacturing. Suitable for researchers, process engineers, and graduate students, this book introduces the basic physics and chemistry of electrical discharges and relates them to plasma...
  • №22
  • 6,94 МБ
  • добавлен
  • изменен
ISTE Press & Elsevier, 2015. — xiv, 108 p. — ISBN: 1785480154, 9781785480157. This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions. This book focuses on...
  • №23
  • 4,31 МБ
  • добавлен
  • изменен
Amsterdam: North-Holland Physics Publishing, 1987. — xii, 497 p. — Defects in Solids, vol. 15. — ISBN: 0-444-87018-0, 978-0-444-87018-6. The book focuses on the processes, reactions, and methodologies involved in the etching of crystals, including thermodynamics and diffusion. The publication first underscores the defects in crystals, detection of defects, and growth and...
  • №24
  • 9,15 МБ
  • добавлен
  • изменен
Springer, 2015. — xiii, 116 p. — ISBN: 978-3-319-10294-8, 978-3-319-10295-5. This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of...
  • №25
  • 10,30 МБ
  • добавлен
  • изменен
N.-Y., L.: Plenum Press, 1991. — 260 p. — Updates in Applied Physics and Electrical Technology. - ISBN: 0306438356, 9780306438356. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Content: Introduction. The Plasma State. The AC Discharge. Gas and Surface Processes. Reactor Technology. Etch Processes....
  • №26
  • 32,70 МБ
  • добавлен
  • изменен
Amsterdam: North-Holland Physics Publishing, 1984. — 306 p. — (Materials Processing: Theory and Practices, vol. 4). — ISBN: 978-0-444-86905-0. This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching...
  • №27
  • 19,88 МБ
  • добавлен
  • изменен
CRC Press, 2007. — 539 p. — ISBN: 0849390052, 9780849390050, 9781420008265. Drawing on Frank G. Kerry’s more than 60 years of experience as a practicing engineer, the Industrial Gas Handbook: Gas Separation and Purification provides from-the-trenches advice that helps practicing engineers master and advance in the field. It offers detailed discussions and up-to-date approaches...
  • №28
  • 23,74 МБ
  • добавлен
  • изменен
Materials Park, OH: ASM International, 2001. — vii, 481 p. — (Surface Engineering Series, v. 2). This handbook provides guidelines and practical information on the chemical vapor deposition (CVD) process for surface engineering design, product development, and manufacturing. The first of the 14 chapters discuss the basic principles of CVD thermodynamics and kinetics, stresses...
  • №29
  • 16,19 МБ
  • добавлен
  • изменен
N.-Y.: Springer Science + Business Media, 1995. — xii, 292 p. — ISBN: 978-1-4757-4753-9, 978-1-4757-4751-5 (eBook). This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the...
  • №30
  • 6,82 МБ
  • добавлен
  • изменен
Cambridge: Royal Society of Chemistry, 2009. — xv, 582 p. — ISBN: 0854044655, 978-1-62198-703-1, 978-0-85404-465-8. Chemical Vapour Deposition (CVD) involves the deposition of thin solid films from chemical precursors in the vapour phase, and encompasses a variety of deposition techniques, including a range of thermal processes, plasma enhanced CVD (PECVD), photon- initiated...
  • №31
  • 77,17 МБ
  • добавлен
  • изменен
Elsevier, 1990. — 718 p. — ISBN: 978-0-444-98801-0, 0-444-98801-7, 0-444-41903-9. The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapour phase deposition (CVD), which has several...
  • №32
  • 14,62 МБ
  • добавлен
  • изменен
St ed. — Park Ridge, NJ: Noyes Publications, 1987. — xi, 215 p. — ISBN 0815511361, 9780815511366, 9780815516392. Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents...
  • №33
  • 10,95 МБ
  • добавлен
  • изменен
NY: Plenum Press, 1984. — viii, 367 p. — The IBM Research Symposia Series. — ISBN: 978-1-4684-4849-8, 978-1-4684-4847-4. The papers collected in this volume were presented at the International Symposium on Methods and Materials in Microelectronic Technology. This symposium was sponsored by IBM Germany, and it was held September 29 - October 1, 1982, in Bad Neuenahr, West...
  • №34
  • 8,53 МБ
  • добавлен
  • изменен
Dordrecht: Kluwer Academic Publishers, 1989. - xiv, 984 p. - ISBN: 978-0-7923-0154-7,978-94-009-0917-5. - (NATO Advanced Science Institute Series E, vol. 164). The primary thrust of very large scale integration (VLSI) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in...
  • №35
  • 28,93 МБ
  • добавлен
  • изменен
William Andrew & Springer-Verlag, 2004. — 532 p. — ISBN 0-8155-1483-2. An invaluable resource for industrial science and engineering newcomers to sputter deposition technology in thin film production applications, this book is rich in coverage of both historical developments and the newest experimental and technological information about ceramic thin films, a key technology for...
  • №36
  • 6,00 МБ
  • добавлен
  • изменен
2nd edition. — William Andrew, 2012. — 660 p. — ISBN 978-1-4377-3483-6. This thoroughly (about 40%) updated new edition includes an entirely new team of contributing authors with backgrounds specializing in the various new applications of sputtering technology that are covered in the book and providing the most up-to-date coverage available anywhere. It forms a bridge between...
  • №37
  • 24,23 МБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 7 p. - Reapproved 2000. This test method provides a technique for measurement of thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates using an infrared dispersive spectrophotometer.
  • №38
  • 83,67 КБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 13 p. This test method covers the measurement of the resistivity of silicon wafers with a in-line four probe measurements.
  • №39
  • 136,42 КБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 9 p. This test method provides procedures for the determination of relative radial resistivity variation of semiconductor wafers cut from silicon single crystals grown either by the Czochralski or floating-zone technique. Описан метод определения относительной радиальной...
  • №40
  • 99,63 КБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 13 p. - Reapproved 1996. These test methods cover two procedures differing most substancially in test specimen requirements, especially their shape: - Method A, van der Pau, - Method B, Parallelepiped, or Bridge-Type.
  • №41
  • 161,05 КБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 6 p. These test methods cover two procedures: - Method A, Two-Probe, - Method B, Four-Probe. These procedures apply directly to both silicon and germanium. Application to other semiconductors may require the use of different probe material and probe attachments.
  • №42
  • 61,46 КБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I). - West Honshohoken, PA: ASTM Intl., 2001. - 6 p. - Reapproved in 1997. These test methods cover the determination of the conductivity type of extrinsic semiconductors, especially germanium and silicon.
  • №43
  • 71,85 КБ
  • добавлен
  • изменен
NY: IEEE Press, 1991. — ix, 603 p. — (IEEE Press Selected Reprint Series). — ISBN-13 978-0879422677, ISBN-10 087942267X. Introduction. Analysis of Packaging Issues. Cofired Ceramic Technology. Thin Film Multilayer Modules on Silicon. Thin Film Multilayer Modules on Ceramic or Metal. Thin Film Dielectric Materials. Cofired Glass/Ceramic Technology. Thermal Analysis of Multichip...
  • №44
  • 12,87 МБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 5 p. - Approved 1987, reapproved 1999. These test methods cover techniques for determining the crystallographic orientation of a surface which is roughly parallel to a low-index atomic plane in single crystals used primarily for semiconductor devices. Two test methods are...
  • №45
  • 69,88 КБ
  • добавлен
  • изменен
In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001.- 8 p. Approved 1991, reapproved 1997. These test methods cover the measurement of minority carrier lifetime appropriate to carrier recombination processes in bulk specimens of extrinsic single-crystal germanium and silicon by measurement of photoconductivity decay after...
  • №46
  • 101,98 КБ
  • добавлен
  • изменен
Boca Raton: CRC Press. - 2012. - xlv, 510 p. - Series in Sensors. - ISBN: 9781439873137, 1439873135. Content: Semiconductors. Growth Techniques. Detector Fabrication. Contacting Systems. Radiation Detection and Measurement. Present Detection Systems. Improving Performance. Abstract: . Although elemental semiconductors such as silicon and germanium are standard for...
  • №47
  • 23,74 МБ
  • добавлен
  • изменен
2nd ed. — Amsterdam: William Andrew, 2014. — 337 p. — ISBN: 978-0-323-26435-8. Aimed at engineers and materials scientists in a wide range of sectors, this book is a unique source of surface preparation principles and techniques for plastics, thermosets, elastomers, ceramics and metals bonding. With emphasis on the practical, it draws together the technical principles of...
  • №48
  • 10,44 МБ
  • добавлен
  • изменен
Norwich, NY: William Andrew Publishing, 2006. — 277 p. — ISBN: 978-0-8155-1919-5, 978-0-8155-1523-4. This book describes and illustrates the surface preparations and operations that must be applied to a surface before acceptable adhesive bonding is achieved. It is meant to be a comprehensive overview, including more detailed explanation where necessary, in a continuous and...
  • №49
  • 14,24 МБ
  • добавлен
  • изменен
Oxford: Pergamon Press, 1988. — 150 p. — (Pergamon Materials Engineering Practice Series). — ISBN 978-0-08-031138-8, 0080311385. Introduction. Mechanical and Textured Finishes. Cleaning. Chemical Finishing. Electroplating on Aluminium. Chemical Colouring of Aluminium. Conversion Coatings as Pretreatments for Painting and Protection. Protective and Decorative Air-drying...
  • №50
  • 18,41 МБ
  • добавлен
  • изменен
Нет выложенных файлов.
  • Страницы:
  • 1
  • 2
  • 3
  • 4
  • 5
  • Всего: 205