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Contents: Pat Hindle, Microwave Journal Editor. How GaAs foundries and Si and GaN technologies measure up in the battle for various commercial and military markets. Analog Devices. Introduction to a low power, short-range transceiver designed for operation in the global 2.4 GHz ISM band. Timothy Boles and Andrew Freeston, M/A-COM Technology Solutions. Introduction to modifications made to existing PHEMT process and device structure to improve switching speed. Chien-Cheng Wei, Chin-Ta Fan, Ta-Hsiang Chiang, Ming-Kuen Chiu and Shao-Pin Ru, Tong Hsing Electronic Industries Ltd. Measurement of wiring self-inductance, self-resonant frequency and insertion loss in comparing the high-frequency performance of ball and ribbon bonding. Xiao Qun Chen, Ling Xia Wang, Chang Yun Cui and Xiao Wei Shi, Xidian University. Demonstration of an open loop resonator bandpass filter using spurline and quarter-wavelength open-circuited stubs to improve outband response. Harry Chapell, Retired Professional Engineer. Presentation of the design equations with theoretical and measured performance values of a partial resistive divider compared to other types of dividers. Agilent Technologies Inc. Development of a real time oscilloscope with 32 GHz of true analog bandwidth. Integra Technologies Inc. Design of a series of devices for radio frequency, pulsed power for S-band radar applications using GaN on a silicon substrate. Quartzlock (UK) Ltd. Introduction to a GPS controlled frequency and timing source with a 10 MHz output phase noise specification of -110 dBc/Hz at 1 Hz offset. Introduction to RMS power detectors for RF power measurement/control between DC and 5.8 GHz.
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