Keller W., Mühlbauer A. Floating-Zone Silicon

Monograph. New York: Marcel Dekker, 1981. — 237 p.We first give a historical survey of the method, which also shows the modifications from the original process until now. Chapter 2 covers the forces in a floating zone. In Chapter 3 technological aspects such as zoner construction, power supply systems, and crystal support are discussed. Chapter 4 deals with several doping methods and Chapter 5 discusses the influence of important growth parameters on melt shape and radial dopant distribution. In Chapter 6 some phenomena associated with crystallographic orientations are described. Chapter 7 presents the most important crystal defects and Chapter 8 compares the float-zone method with the well-known Czochralski technique.Introduction and Historical Survey
Principles of Floating-Zone Growth
Single-Crystal Quality
Growth of Larger-Diameter Single Crystals
Float-Zone Equipment
Forces in a Floating Zone
Stabilizing Forces
Destabilizing Forces
Stirring Forces
Float-Zone Apparatus. Technological Aspects
Zoner Concepts
Mechanical Systems
Induction Heating
Influence of the Ambient
Doping Methods and Dopant Incorporation
The Distribution Coefficient
Doping Methods and Integral Dopant Distributions
Dopant Incorporation and Macroscopic Radial
Distribution
Dopant Incorporation and Microscopic Distribution
Factors Influencing Growth, Melt Shape, and Radial Dopant Distribution
Crystal Orientation and Shape of the Growing
Interface
Rotation Rate
Eccentric Rotation of the Growing Interface
Melt Coil and External Zone Length
Growth Rate
Coil Contours
Crystal Diameter
Dopant
Important Crystallographic Relationships
Orientation of Seed Crystals
Orientation and Crystal Shape
Defects
Dislocations
Swirl Defects
Hydrogen Defects
Etching Depressions
Comparison with the Czochralski Technique
Limitations and Future Aspects of Silicon
Float-Zone Crystal Growth
SymbolsAuthor Index
Subject Index