Shchukin V.A., Ledentsov N.N., Bimberg D. Epitaxy of Nanostructures

Springer, 2004. — 392 p. — ISBN: 9783642087356The general trend in modern solid state physics and technology is to make things smaller. The size of key elements in modern devices approaches the nanometer scale, for both vertical and lateral dimensions. Ultrathin layers, or quantum wells, had already gained broad acceptance for applications in micro- and optoelectronics by the 1980s. However, the development of heterostructures with lower dimensionality (quantum wires, where carriers are confined in two directions and move freely in one, and quantum dots, where carriers are confined in all three directions) took longer. It became clear that quantum wire and dot structures constitute the utmost technological challenge, whilst providing enormous advantages.
At the beginning of the 1990s, a few outstanding discoveries concerning self-organization phenomena at crystal surfaces for direct fabrication of nanostructures led to a change in the major paradigms of semiconductor physics and technology. This new approach in epitaxy enables fast parallel fabrication of large densities of quantum dots or wires for almost unlimited material combinations and has become the basis for a powerful new branch of nanotechnology. Quantum dots, coherent inclusions in a semiconductor matrix with zero-dimensional electronic properties persistent up to room temperature, have demonstrated fascinating physical properties and given birth to a novel generation of optoelectronic devices and systems.Growth and Characterization Techniques
Self-Organization Phenomena at Crystal Surfaces
Engineering of Complex N anostructures: Working Together with Nature
Devices Based on Epitaxial NanostructuresAppendices
Energy of a Strained Disk with Perturbed Shape
Elastic Interaction of Two Strained Disks
Stiffness of a Hexagonal Array of Interacting Strained Disks