ASTM F 95-89. Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

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In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001. - 7 p. - Reapproved 2000.
This test method provides a technique for measurement of thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates using an infrared dispersive spectrophotometer.