In: Annual Book of ASTM Standards vol. 10.04 (Electronics I), West Honshohoken, PA: ASTM Intl., 2001.- 8 p. Approved 1991, reapproved 1997.
These test methods cover the measurement of minority carrier lifetime appropriate to carrier recombination processes in bulk specimens of extrinsic single-crystal germanium and silicon by measurement of photoconductivity decay after generation of carriers by light pulse.