Springer, 2014. — 209 p. — (Analog Circuits and Signal Processing). — ISBN-10: 3319011642. — ISBN-13: 978-3319011646.With the development of modern silicon technology, more and more high-frequency circuits can be implemented in standard complementary metal-oxide-semiconductor (CMOS) processes. The feasibility of RF ICs in standard CMOS process is established, and the trend in putting all components of a system on a chip includes integration of the transceiver (T/R) antenna switch. In this book, we have designed a double-gate (DG) MOSFET and double-pole four-throw (DP4T) RF switch to enhance its performance for the next generation wireless communication systems. Further we have combined the ideas of DG MOSFET and DP4T switch to design a novel DP4T DG RF CMOS switch. The designed DP4T DG RF CMOS switch can route four inputs to two outputs at a time or vice versa. So it is twice effective as compared to the previously existing SPDT switches. In the DG MOSFET, the gates are only on the two sides of the substrate. Hence, to utilize all the sides of the substrate, we have widened the gate all around the device and designed like a cylinder. Therefore, we extend this work to the cylindrical surrounding double-gate (CSDG) MOSFET. It has less contact area with the board compared to the other MOSFETs. Due to the circular source and drain, the gate contact with the source and drain is on a long circular region, which avoids the gate misalignment. This work has been extended by replacing SiO2 with HfO2 as a high dielectric material to design DG MOSFET. Finally, we have analyzed the image acquisition of DG MOSFET and CSDG MOSFETs for the purpose of RF switch. The proposed model emphasized on the basics of single image sensor for two-dimensional images of a three-dimensional device, so that we can obtain a satisfactory device parameter.Introduction. Introduction. Transceiver Systems. Radio-Frequency Switches. Radio-Frequency MOSFETs. Issues of Radio-Frequency MOSFET Modeling. Double-Gate MOSFET. Cylindrical Surrounding Double-Gate MOSFET. Hafnium Dioxide-Based MOSFET. Image Acquisition of the MOSFETs. Conclusion. References. Design of Double-Pole Four-Throw RF Switch. Introduction. Comparison of Various Switches. RF Transceiver Systems. RF Transceiver Switch. Design of CMOS Inverter for RF Switch. Configuration of Switches. Design of DP4T RF Switch Based on Single-Gate MOSFET. Operational Characteristics of DP4T CMOS Switch. RF Switch Performance Parameters. Topologies for DP4T Switches. Conclusions. References. Design of Double-Gate MOSFET. Introduction. Design Process of Double-Gate MOSFET. Effects of Double-Gate MOSFET on the Leakage Currents. Performance Improvement of DG MOSFET over SG MOSFET. Resistive and Capacitive Model of DG MOSFET and SG MOSFET. Characteristics of the DG MOSFET with Aspect Ratios. Design of DG MOSFET with Several Gate-Fingers. Model of Series and Parallel Combination for Double-Gate MOSFET. Conclusions. References. Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET. Introduction. Basics of Radio System Design. Design of DP4T DG RF CMOS Switch. Characteristics of DP4T DG RF CMOS Switch. Effective ON-State Resistance of DP4T DG RF CMOS Switch. Attenuation of DP4T CMOS Switch. OFF-Isolation. Resistive and Capacitive Model of DP4T DG RF CMOS Switch. Switching Speed of DP4T DG RF CMOS Switch. S-Parameters of DP4T DG RF CMOS Switch. Conclusions. References. Cylindrical Surrounding Double-Gate RF MOSFET. Introduction. Analysis of CSDG RF MOSFET. Fabrication Process for CSDG RF MOSFET. Characteristics of CSDG MOSFET. Resistive and Capacitive Model of the CSDG MOSFET. Explicit Model of CSDG MOSFET. Gate Leakage Current, Noise Model, and Short Channel Effects for CSDG MOSFET. Cross talk in CSDG MOSFET Model. Advantages of the CSDG MOSFET Model. Conclusions. References. Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch. Introduction. MOSFET Model with HfO. Fabrication Process of HfO2-Based DG MOSFET. Parameters of HfO2-Based MOSFET. Switching Characteristics of HfO2-Based MOSFET. DP4T Switch Design with HfO2-Based DG MOSFET. Characteristics of DP4T Switch with HfO2-Based. Conclusions. References. Testing of MOSFETs Surfaces Using Image Acquisition. Introduction. Proposed Model for the Image Acquisition of MOSFETs. Image Analysis. Conclusion. References. Conclusions and Future Scope. Conclusions. Future Scope. References. Appendix A. List of Symbols. Appendix B. List of Deﬁnitions. Appendix C. Outcomes of the Book. About the Authors. Index.
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